SEOUL, South Korea / RankWire.AI / – Samsung Electronics has introduced innovative strategies for memory and storage technology aimed at enhancing artificial intelligence infrastructure performance. The company shared these plans at the 2026 OCP Global Summit in San Jose, California, held from October 12 to 15. Its roadmap emphasizes high-performance memory, expanding memory capacity via Compute Express Link, and next-generation solid-state drives. Samsung will also conduct a joint CXL demonstration with AMD. These initiatives address capacity limitations currently affecting AI server systems.
The company outlined its approach through three primary objectives: speed, scalability of memory, and data durability. To improve speed, Samsung showcased tailored high-bandwidth memory alongside HBM5, the eighth generation of the technology. For scalability, it promoted CXL as a method to add capacity beyond the memory integrated within each server. Regarding persistence, Samsung introduced next-generation SSD-based data storage and management solutions. Additionally, the company presented storage software designed to enhance data processing efficiency in AI applications.
Samsung states that the increasing deployment of AI agents is intensifying the need for more memory during inference, as larger models generate more data that must remain accessible to processors. Conventional architectures limit the amount of memory each processor can access, but Samsung introduced CXL technology as a practical solution to overcome these restrictions. The company also demonstrated key-value cache optimization, which allows AI models to reuse previously processed data instead of duplicating effort.
Collaboration with AMD Expands CXL Memory Capabilities
Samsung and AMD will jointly showcase a CXL-based system that increases memory capacity in AI environments, enabling processors to share memory resources rather than relying solely on local server memory. Samsung confirmed that engineers have validated this solution in real-world system settings. This demonstration builds upon a memorandum of understanding signed in March 2026 by both companies for next-generation AI memory and computing. AMD CEO Lisa Su visited Korea on October 7 and met Jeon Young-hyun, Vice Chairman of Samsung’s Device Solutions division.
Memory pooling was another key feature highlighted by Samsung, which demonstrated CMM-D, a CXL-based DRAM module that connects multiple memory units into a single shared pool. Systems can draw from this pool as workload demands increase. The company also showcased processing-in-memory technology, which performs some calculations within memory chips to cut down data transfer and energy consumption. Exhibits included 2-nanometer gate-all-around wafers, Groq LPU wafers, and Nvidia’s Groq 3 LPX system.
Early Co-Design Influences Samsung’s AI Memory Strategy
Shim Ho-jun, Corporate Vice President and Head of Samsung’s Application Engineering Team, discussed the company’s plans during an executive session. He emphasized that the growth of larger AI models and increased inference workloads make expanding memory capacity and bandwidth vital for system performance. Shim also noted that Samsung is expanding co-design and technical validation efforts with global partners from the earliest stages of development, aiming to better align its memory and storage products with customer system requirements.
Samsung MAX Lab provides clients with a testing environment for evaluating memory and storage solutions under real-world AI workloads, offering co-design tailored to specific system configurations. Customers can test pre-commercial technologies, including PIM and next-generation SSDs, before they are commercially available. Samsung participated in the summit as a Diamond Sponsor. The event follows its appearances in 2026 at Nvidia GTC, COMPUTEX, and the Future of Memory and Storage conference, marking an expansion of its presence in AI memory innovation.